IPD50R1K4CEAUMA1

Symbol Micros: TIPD50r1k4ce

171910

TIPD50r1k4ce

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor N-Channel MOSFET; 500V; 20V; 1,4Ohm; 3,1A; 42W; -55°C~150°C; Substitute: IPD50R1K4CEBTMA1;

Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	3,1A
Max. power loss:	42W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	3,1A
Max. power loss:	42W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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