IPD50R1K4CEAUMA1

Symbol Micros: TIPD50r1k4ce

171910

TIPD50r1k4ce

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor N-Channel MOSFET; 500V; 20V; 1,4Ohm; 3,1A; 42W; -55°C~150°C; Substitute: IPD50R1K4CEBTMA1;

Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	3,1A
Max. power loss:	42W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD50R1K4CEAUMA1 Case style: DPAK  

External warehouse:

10000 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,1633

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	3,1A
Max. power loss:	42W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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