IPD50R500CE INFINEON

Symbol Micros: TIPD50r500ce
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Case : TO252/3 (DPAK)
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N-MOSFET 500V 7.6A 57W 500mΩ
Parameters
Open channel resistance: 1,18Ohm
Max. drain current: 7,6A
Max. power loss: 57W
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 550V
Transistor type: N-MOSFET
         
 
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Open channel resistance: 1,18Ohm
Max. drain current: 7,6A
Max. power loss: 57W
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 550V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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