IPD50R500CE INFINEON

Symbol Micros: TIPD50r500ce

118168

TIPD50r500ce

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 500V 7.6A 57W 500mΩ

Parameters

Open channel resistance:	1,18Ohm
Max. drain current:	7,6A
Max. power loss:	57W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	550V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD50R500CEAUMA1 Case style: TO252/3 (DPAK)  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2517

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,18Ohm
Max. drain current:	7,6A
Max. power loss:	57W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	550V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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