IPD60R1K0PFD7S

Symbol Micros: TIPD60r1k0pfd7s

351549

TIPD60r1k0pfd7s

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor: N-MOSFET | CoolMOSt PFD7 | unipolarny | 650V | 3A | 26W IPD60R1K0PFD7SAUMA1

Parameters

Open channel resistance:	1,978Ohm
Max. drain current:	4,7A
Max. power loss:	26W
Case:	DPAK
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,978Ohm
Max. drain current:	4,7A
Max. power loss:	26W
Case:	DPAK
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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