IPD60R280P7ATMA1
Symbol Micros:
TIPD60r280p7
Case : DPAK
Transistor: N-MOSFET ; unipolarny ; 600V ; 12A ; 53W ; PG-TO252-3 600V CoolMOS P7 Power Transistor
Parameters
Open channel resistance: | 280mOhm |
Max. drain current: | 12A |
Max. power loss: | 53W |
Case: | DPAK |
Manufacturer: | INFINEON |
Max. drain-source voltage: | 600V |
Transistor type: | N-MOSFET |
Open channel resistance: | 280mOhm |
Max. drain current: | 12A |
Max. power loss: | 53W |
Case: | DPAK |
Manufacturer: | INFINEON |
Max. drain-source voltage: | 600V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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