IPD60R280P7ATMA1

Symbol Micros: TIPD60r280p7
Contractor Symbol:
Case : DPAK
Transistor: N-MOSFET ; unipolarny ; 600V ; 12A ; 53W ; PG-TO252-3 600V CoolMOS P7 Power Transistor
Parameters
Open channel resistance: 280mOhm
Max. drain current: 12A
Max. power loss: 53W
Case: DPAK
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 280mOhm
Max. drain current: 12A
Max. power loss: 53W
Case: DPAK
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD