IPD60R280P7S Infineon Technologies

Symbol Micros: TIPD60r280p7s

275255

TIPD60r280p7s

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Case : TO252

Datasheet

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MOSFET N-CH 600V 12A TO252-3 IPD60R280P7SAUMA1

Parameters

Open channel resistance:	501mOhm
Max. drain current:	12A
Max. power loss:	53W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD60R280P7SAUMA1 Case style: TO252  

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2500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3016

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	501mOhm
Max. drain current:	12A
Max. power loss:	53W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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