IPD60R2K0C6ATMA1

Symbol Micros: TIPD60r2k0c6

198123

TIPD60r2k0c6

Contractor Symbol:

Case : DPAK

Datasheet

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N-Channel MOSFET; 650V; 20V; 4,68Ohm; 2,4A; 22,3W; -55°C ~ 150°C;

Parameters

Open channel resistance:	4,68Ohm
Max. drain current:	2,4A
Max. power loss:	22,3W
Case:	DPAK
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	4,68Ohm
Max. drain current:	2,4A
Max. power loss:	22,3W
Case:	DPAK
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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