IPD60R3K3C6 Infineon Tech

Symbol Micros: TIPD60r3k3c6

94944

TIPD60r3k3c6

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Case : TO252

Datasheet

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N-MOSFET 600V 1.7A 18.1W 3.3Ω

Parameters

Open channel resistance:	7,72Ohm
Max. drain current:	1,7A
Max. power loss:	18,1W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	7,72Ohm
Max. drain current:	1,7A
Max. power loss:	18,1W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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