IPD60R3K3C6 Infineon Tech

Symbol Micros: TIPD60r3k3c6
Contractor Symbol:
Case : TO252
N-MOSFET 600V 1.7A 18.1W 3.3Ω
Parameters
Open channel resistance: 7,72Ohm
Max. drain current: 1,7A
Max. power loss: 18,1W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 7,72Ohm
Max. drain current: 1,7A
Max. power loss: 18,1W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD