IPD60R3K3C6 Infineon Tech

Symbol Micros: TIPD60r3k3c6

94944

TIPD60r3k3c6

Contractor Symbol:

Case : TO252

Datasheet

Technical drawing Add to favourites

N-MOSFET 600V 1.7A 18.1W 3.3Ω

Parameters

Open channel resistance:	7,72Ohm
Max. drain current:	1,7A
Max. power loss:	18,1W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD60R3K3C6ATMA1 Case style: TO252  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2217

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	7,72Ohm
Max. drain current:	1,7A
Max. power loss:	18,1W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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