IDP78CN10NG TO252-3

Symbol Micros: TIPD78cn10n

118138

TIPD78cn10n

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 100V 13A 31W 78mΩ

Parameters

Open channel resistance:	80mOhm
Max. drain current:	13A
Max. power loss:	31W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD78CN10NGATMA1 RoHS Case style: TO252/3 (DPAK) Datasheet

In stock:

55 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6432	0,4038	0,3357	0,2981	0,2794

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	80mOhm
Max. drain current:	13A
Max. power loss:	31W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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