IDP78CN10NG TO252-3

Symbol Micros: TIPD78cn10n

118138

TIPD78cn10n

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 100V 13A 31W 78mΩ

Parameters

Open channel resistance:	80mOhm
Max. drain current:	13A
Max. power loss:	31W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD78CN10NGATMA1 RoHS Case style: TO252/3 (DPAK) Datasheet

In stock:

55 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6414	0,4026	0,3347	0,2973	0,2786

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IPD78CN10NGATMA1 Case style: TO252/3 (DPAK)  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2786

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	80mOhm
Max. drain current:	13A
Max. power loss:	31W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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