IPD80R2K4P7ATMA1 

Symbol Micros: TIPD80r2k4p7

171918

TIPD80r2k4p7

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 800V; 20V; 2,4Ohm; 2,5A; 22W; -55°C~150°C;

Parameters

Open channel resistance:	2,4Ohm
Max. drain current:	2,5A
Max. power loss:	22W
Case:	TO252 (DPACK)
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD80R2K4P7ATMA1 Case style: TO252/3 (DPAK)  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2770

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	2,4Ohm
Max. drain current:	2,5A
Max. power loss:	22W
Case:	TO252 (DPACK)
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C

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