IPD80R3K3P7 

Symbol Micros: TIPD80r3k3p7

171920

TIPD80r3k3p7

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor N-Channel MOSFET; 800V; 20V; 3,3Ohm; 1,9A; 18W; -55°C~150°C; Substitute: IPD80R3K3P7ATMA1;

Parameters

Open channel resistance:	3,3Ohm
Max. power loss:	18W
Max. drain current:	1,9A
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD80R3K3P7ATMA1 Case style: DPAK  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,2545

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	3,3Ohm
Max. power loss:	18W
Max. drain current:	1,9A
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C

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