IPD90R1K2C3 INFINEON

Symbol Micros: TIPD90r1k2c3

118161

TIPD90r1k2c3

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Case : TO252

Datasheet

Technical drawing Add to favourites

N-MOSFET 900V 5.1A 83W 1.2Ω

Parameters

Open channel resistance:	2,5Ohm
Max. drain current:	5,1A
Max. power loss:	83W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	2,5Ohm
Max. drain current:	5,1A
Max. power loss:	83W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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