IPD90R1K2C3 INFINEON

Symbol Micros: TIPD90r1k2c3
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Case : TO252
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N-MOSFET 900V 5.1A 83W 1.2Ω
Parameters
Open channel resistance: 2,5Ohm
Max. drain current: 5,1A
Max. power loss: 83W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 900V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 2,5Ohm
Max. drain current: 5,1A
Max. power loss: 83W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 900V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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