IPD90R1K2C3 INFINEON

Symbol Micros: TIPD90r1k2c3

118161

TIPD90r1k2c3

Contractor Symbol:

Case : TO252

Datasheet

Technical drawing Add to favourites

N-MOSFET 900V 5.1A 83W 1.2Ω

Parameters

Open channel resistance:	2,5Ohm
Max. drain current:	5,1A
Max. power loss:	83W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD90R1K2C3 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,2461	0,8737	0,7425	0,6793	0,6558

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IPD90R1K2C3ATMA2 Case style: TO252  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,6558

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	2,5Ohm
Max. drain current:	5,1A
Max. power loss:	83W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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