G60N04D52

Symbol Micros: TIPG20n04s4l08 GO

397042

TIPG20n04s4l08 GO

Case : DFN08(5x6)

Datasheet

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Transistor MOSFET; DFN5*6-8L; DUAL; N+N-Channel; NO ESD; 40V; 60A; 65W; 12mOhm IPG20N04S4L08ATMA1; AON6884

Parameters

Open channel resistance:	12mOhm
Max. drain current:	60A
Max. power loss:	65W
Case:	DFN08(5x6) Dual
Manufacturer:	GOFORD
Max. drain-source voltage:	40V
Transistor type:	2xN-MOSFET

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• Parameters

Open channel resistance:	12mOhm
Max. drain current:	60A
Max. power loss:	65W
Case:	DFN08(5x6) Dual
Manufacturer:	GOFORD
Max. drain-source voltage:	40V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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