IPN60R1K0PFD7S

Symbol Micros: TIPN60r1k0pfd7s

351563

TIPN60r1k0pfd7s

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Case : SOT223

Datasheet

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CoolMOS MOSFET N-Channel Enhancement Mode 650V 4.7A IPN60R1K0PFDS7SATMA1

Parameters

Open channel resistance:	1,978Ohm
Max. drain current:	4,7A
Max. power loss:	6W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,978Ohm
Max. drain current:	4,7A
Max. power loss:	6W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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