IPN60R1K0PFD7S
Symbol Micros:
TIPN60r1k0pfd7s
Case : SOT223
CoolMOS MOSFET N-Channel Enhancement Mode 650V 4.7A IPN60R1K0PFDS7SATMA1
Parameters
Open channel resistance: | 1,978Ohm |
Max. drain current: | 4,7A |
Max. power loss: | 6W |
Case: | SOT223 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Open channel resistance: | 1,978Ohm |
Max. drain current: | 4,7A |
Max. power loss: | 6W |
Case: | SOT223 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -40°C ~ 150°C |
Mounting: | SMD |
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