IPN60R2K1CEATMA1 

Symbol Micros: TIPN60r2k1ce

171955

TIPN60r2k1ce

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

Tranzystor N-Channel MOSFET; 600V; 20V; 2,1Ohm; 3,7A; 5W; -40°C~150°C;

Parameters

Open channel resistance:	2,1Ohm
Max. drain current:	3,7A
Max. power loss:	5W
Case:	SOT223
Manufacturer:	INFINEON
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPN60R2K1CEATMA1 Case style: SOT223  

External warehouse:

21000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1263

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	2,1Ohm
Max. drain current:	3,7A
Max. power loss:	5W
Case:	SOT223
Manufacturer:	INFINEON
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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