IPN60R360PFD7S

Symbol Micros: TIPN60r360pfd7s

351558

TIPN60r360pfd7s

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

Transistors - FETs, MOSFETs - Single IPN60R360PFD7SATMA1

Parameters

Open channel resistance:	705mOhm
Max. drain current:	10A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPN60R360PFD7SATMA1 RoHS Case style: SOT223t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	47+	188+
Net price (EUR)	1,0089	0,7397	0,5922	0,5103	0,4799

Add to comparison tool Add inquiry (RFQ)

Packaging:
47 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPN60R360PFD7SATMA1 Case style: SOT223  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4799

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	705mOhm
Max. drain current:	10A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.