IPN60R360PFD7S

Symbol Micros: TIPN60r360pfd7s

351558

TIPN60r360pfd7s

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

Transistors - FETs, MOSFETs - Single IPN60R360PFD7SATMA1; IPN60R360PFD7SAT-0;

Parameters

Open channel resistance:	705mOhm
Max. drain current:	10A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	705mOhm
Max. drain current:	10A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.