IPN60R360PFD7S

Symbol Micros: TIPN60r360pfd7s

351558

TIPN60r360pfd7s

Contractor Symbol:

Case : SOT223

Datasheet

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Transistors - FETs, MOSFETs - Single IPN60R360PFD7SATMA1

Parameters

Open channel resistance:	705mOhm
Max. drain current:	10A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPN60R360PFD7SATMA1 RoHS Case style: SOT223t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	47+	188+
Net price (EUR)	0,9918	0,7273	0,5833	0,5030	0,4723

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Packaging:
47 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPN60R360PFD7SATMA1 Case style: SOT223  

External warehouse:

63000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,4723

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	705mOhm
Max. drain current:	10A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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