IPN60R600P7S

Symbol Micros: TIPN60r600p7s

194127

TIPN60r600p7s

Contractor Symbol:

Case : SOT223

Datasheet

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Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) SOT-223 T/R IPN60R600P7SATMA1

Parameters

Open channel resistance:	1,145mOhm
Max. drain current:	6A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPN60R600P7SATMA1 RoHS Case style: SOT223t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,1306	0,7514	0,6227	0,5618	0,5384

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Packaging:
20 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPN60R600PFD7SATMA1 Case style: SOT223  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5384

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,145mOhm
Max. drain current:	6A
Max. power loss:	7W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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