IPN80R2K4P7ATMA1 

Symbol Micros: TIPN80r2k4p7

171961

TIPN80r2k4p7

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 800V; +/-20V; 2,4Ohm; 2,4A; 6,3W; -55°C~150°C;

Parameters

Open channel resistance:	2,4Ohm
Max. drain current:	2,4A
Max. power loss:	6,3W
Case:	SOT223
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPN80R2K4P7ATMA1 Case style: SOT223  

External warehouse:

27000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,2620

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	2,4Ohm
Max. drain current:	2,4A
Max. power loss:	6,3W
Case:	SOT223
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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