IPP110N20N3G

Symbol Micros: TIPP110n20n3g
Contractor Symbol:
Case : TO220
N-MOSFET 88A 200V 300W IPP110N20N3GXKSA1
Parameters
Open channel resistance: 11mOhm
Max. drain current: 88A
Max. power loss: 300W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPP110N20N3G RoHS Case style: TO220 Datasheet
In stock:
8 pcs.
Quantity of pcs. 1+ 4+ 16+ 64+ 192+
Net price (EUR) 3,5604 3,1071 2,8875 2,7813 2,7388
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Packaging:
16
Manufacturer:: Infineon Manufacturer part number: IPP110N20N3GXKSA1 Case style: TO220  
External warehouse:
2400 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 2,7388
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IPP110N20N3GXKSA1 Case style: TO220  
External warehouse:
14550 pcs.
Quantity of pcs. 500+ (Please wait for the order confirmation)
Net price (EUR) 2,7388
Add to comparison tool
Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 11mOhm
Max. drain current: 88A
Max. power loss: 300W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT