IPP110N20N3G

Symbol Micros: TIPP110n20n3g

114421

TIPP110n20n3g

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 88A 200V 300W IPP110N20N3GXKSA1

Parameters

Open channel resistance:	11mOhm
Max. power loss:	300W
Max. drain current:	88A
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPP110N20N3G RoHS Case style: TO220 Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	4+	16+	64+	192+
Net price (EUR)	3,4857	3,0419	2,8269	2,7229	2,6813

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Packaging:
16 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPP110N20N3GXKSA1 Case style: TO220  

External warehouse:

100 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	2,6813

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Packaging:
500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	11mOhm
Max. power loss:	300W
Max. drain current:	88A
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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