IPP110N20N3G

Symbol Micros: TIPP110n20n3g

114421

TIPP110n20n3g

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 88A 200V 300W IPP110N20N3GXKSA1

Parameters

Open channel resistance:	11mOhm
Max. drain current:	88A
Max. power loss:	300W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPP110N20N3G RoHS Case style: TO220 Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	4+	16+	64+	192+
Net price (EUR)	3,5402	3,0894	2,8711	2,7655	2,7232

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Packaging:
16 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	11mOhm
Max. drain current:	88A
Max. power loss:	300W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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