IPP60R099C6
Symbol Micros:
TIPP60r099c6
Case : TO220
N-MOSFET 37.9A 600V 278W IPP60R099C6XKSA1
Parameters
Open channel resistance: | 230mOhm |
Max. drain current: | 37,9A |
Max. power loss: | 278W |
Case: | TO220 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Open channel resistance: | 230mOhm |
Max. drain current: | 37,9A |
Max. power loss: | 278W |
Case: | TO220 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 30V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
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