IPP60R099CP

Symbol Micros: TIPP60r099cp
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Case : TO220
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N-MOSFET 31A 600V 255W 0.099Ω
Parameters
Open channel resistance: 240mOhm
Max. drain current: 31A
Max. power loss: 255W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
         
 
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Open channel resistance: 240mOhm
Max. drain current: 31A
Max. power loss: 255W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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