IPP60R125CP

Symbol Micros: TIPP60r125cp
Contractor Symbol:
Case : TO220
N-MOSFET 25A 650V IPP60R125CPXKSA1
Parameters
Open channel resistance: 300mOhm
Max. drain current: 25A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPP60R125CPXKSA1 Case style: TO220  
External warehouse:
473 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,4174
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 300mOhm
Max. drain current: 25A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT