IPP65R600E6XKSA1 

Symbol Micros: TIPP65r600e6

171997

TIPP65r600e6

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 650V; 20V; 600mOhm; 7,3A; 63W; -55°C~150°C;

Parameters

Open channel resistance:	600mOhm
Max. drain current:	7,3A
Max. power loss:	63W
Case:	TO220
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Max. drain-gate voltage:	10V

All parameters

         

 

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• Parameters

Open channel resistance:	600mOhm
Max. drain current:	7,3A
Max. power loss:	63W
Case:	TO220
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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