IPS60R210PFD7S

Symbol Micros: TIPS60r210pfd7s

351560

TIPS60r210pfd7s

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

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Transistors - FETs, MOSFETs - Single IPS60R210PFD7SAKMA1

Parameters

Open channel resistance:	386mOhm
Max. drain current:	16A
Max. power loss:	64W
Case:	TO251 (IPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPS60R210PFD7SAKMA1 RoHS Case style: TO251 (IPACK) Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,9837	1,6151	1,4015	1,2982	1,2395

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	386mOhm
Max. drain current:	16A
Max. power loss:	64W
Case:	TO251 (IPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	THT

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