IPS60R280PFD7S

Symbol Micros: TIPS60r280pfd7s

351564

TIPS60r280pfd7s

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

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CoolMOS MOSFET N-Channel Enhancement Mode 650V 12A IPS60R280PFD7SAKMA1

Parameters

Open channel resistance:	549mOhm
Max. drain current:	12A
Max. power loss:	51W
Case:	TO251 (IPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPS60R280PFD7SAKMA1 RoHS Case style: TO251 (IPACK) Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,6269	1,2898	1,0978	1,0089	0,9574

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	549mOhm
Max. drain current:	12A
Max. power loss:	51W
Case:	TO251 (IPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	THT

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