IPS60R360PFD7S
Symbol Micros:
TIPS60r360pfd7s
Case : TO251 (IPACK)
Mosfet, N-Ch, 600V, 10A IPS60R360PFD7SAKMA1
Parameters
| Open channel resistance: | 714mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 43W |
| Case: | TO251 (IPACK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 714mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 43W |
| Case: | TO251 (IPACK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -40°C ~ 150°C |
| Mounting: | THT |
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