IPT029N08N5ATMA1 

Symbol Micros: TIPT029n08n5

172024

TIPT029n08n5

Contractor Symbol:

Case : HSOF8

Datasheet

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Transistor N-Channel MOSFET; 80V; 20V; 2,9mOhm; 52A; 168W; -55°C~175°C;

Parameters

Open channel resistance:	2,9mOhm
Max. drain current:	52A
Max. power loss:	168W
Case:	HSOF8
Manufacturer:	INFINEON
Max. drain-source voltage:	80V
Max. drain-gate voltage:	6V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPT029N08N5ATMA1 Case style: HSOF8  

External warehouse:

2000 pcs.

Quantity of pcs.	2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,7581

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Packaging:
2000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	2,9mOhm
Max. drain current:	52A
Max. power loss:	168W
Case:	HSOF8
Manufacturer:	INFINEON
Max. drain-source voltage:	80V
Max. drain-gate voltage:	6V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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