IPT60R028G7XTMA1 

Symbol Micros: TIPT60r028g7

172025

TIPT60r028g7

Contractor Symbol:

Case : HSOF8

Datasheet

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Transistor N-Channel MOSFET; 600V; 20V; 28mOhm; 75A; 391W; -55°C~150°C;

Parameters

Open channel resistance:	28mOhm
Max. drain current:	75A
Max. power loss:	391W
Case:	HSOF8
Manufacturer:	INFINEON
Max. drain-source voltage:	600V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPT60R028G7XTMA1 Case style: HSOF8  

External warehouse:

2000 pcs.

Quantity of pcs.	2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	7,5210

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Packaging:
2000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	28mOhm
Max. drain current:	75A
Max. power loss:	391W
Case:	HSOF8
Manufacturer:	INFINEON
Max. drain-source voltage:	600V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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