IPT60R080G7XTMA1 

Symbol Micros: TIPT60r080g7

172027

TIPT60r080g7

Contractor Symbol:

Case : HSOF8

Datasheet

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Tranzystor N-Channel MOSFET; 650V; 20V; 80mOhm; 29A; 167W; -40°C~150°C;

Parameters

Open channel resistance:	80mOhm
Max. drain current:	29A
Max. power loss:	167W
Case:	HSOF8
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	80mOhm
Max. drain current:	29A
Max. power loss:	167W
Case:	HSOF8
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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