IPW60R041C6
Symbol Micros:
TIPW60r041c6
Case : TO 3P
Transistor N-Channel MOSFET; 650V; 30V; 96mOhm; 77,5A; 481W; -55°C ~ 150°C; IPW60R041C6FKSA1
Parameters
| Open channel resistance: | 96mOhm |
| Max. drain current: | 77,5A |
| Max. power loss: | 481W |
| Case: | TO 3P |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 96mOhm |
| Max. drain current: | 77,5A |
| Max. power loss: | 481W |
| Case: | TO 3P |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols