IPW60R099C6

Symbol Micros: TIPW60r099c6

121380

TIPW60r099c6

Contractor Symbol:

Case : TO 3P

Datasheet

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Transistor N-Channel MOSFET; 650V; 30V; 230mOhm; 37,9A; 278W; -55°C ~ 150°C;

Parameters

Open channel resistance:	230mOhm
Max. drain current:	37,9A
Max. power loss:	278W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 RoHS Case style: TO 3P Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,0684	4,6670	4,4205	4,2961	4,2233

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	230mOhm
Max. drain current:	37,9A
Max. power loss:	278W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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