IPW60R099C6

Symbol Micros: TIPW60r099c6
Contractor Symbol:
Case : TO 3P
Transistor N-Channel MOSFET; 650V; 30V; 230mOhm; 37,9A; 278W; -55°C ~ 150°C;
Parameters
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Max. gate-source Voltage: 30V
Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 RoHS Case style: TO 3P Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 4,9695 4,5759 4,3342 4,2122 4,1409
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Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 Case style: TO 3P  
External warehouse:
77 pcs.
Quantity of pcs. 1+ (Please wait for the order confirmation)
Net price (EUR) 4,3930
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 Case style: TO 3P  
External warehouse:
690 pcs.
Quantity of pcs. 60+ (Please wait for the order confirmation)
Net price (EUR) 4,1409
Add to comparison tool
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Max. gate-source Voltage: 30V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT