IPW60R125P6

Symbol Micros: TIPW60r125p6
Contractor Symbol:
Case : TO 3P
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N-MOSFET 30A 600V 219W 0.125Ω IPW60R125P6XKSA1
Parameters
Open channel resistance: 293mOhm
Max. drain current: 30A
Max. power loss: 219W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPW60R125P6XKSA1 RoHS Case style: TO 3P Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 6,5137 5,5231 4,9158 4,6064 4,4310
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Packaging:
30
Open channel resistance: 293mOhm
Max. drain current: 30A
Max. power loss: 219W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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