IPW60R160C6

Symbol Micros: TIPW60r160c6

122178

TIPW60r160c6

Contractor Symbol:

Case : TO 3P

Datasheet

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Transistor N-Channel MOSFET; 650V; 30V; 370mOhm; 23,8A; 176W; -55°C ~ 150°C; IPW60R160C6FKSA1

Parameters

Open channel resistance:	370mOhm
Max. drain current:	23,8A
Max. power loss:	176W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPW60R160C6FKSA1 RoHS Case style: TO 3P Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	4,6469	3,9112	3,4692	3,2506	3,1185

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Packaging:
10 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IPW60R160C6FKSA1 Case style: TO 3P  

External warehouse:

21 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	3,1185

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
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• Parameters

Open channel resistance:	370mOhm
Max. drain current:	23,8A
Max. power loss:	176W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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