IPW60R190P6FKSA1 

Symbol Micros: TIPW60r190p6
Contractor Symbol:
Case : TO247
Transistor N-Channel MOSFET; 600V; 20V; 190mOhm; 20,2A; 151W; -55°C~150°C;
Parameters
Open channel resistance: 190mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO247
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Max. drain-gate voltage: 10V
Manufacturer:: Infineon Manufacturer part number: IPW60R190P6FKSA1 Case style: TO247  
External warehouse:
720 pcs.
Quantity of pcs. 240+ (Please wait for the order confirmation)
Net price (EUR) 0,8874
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Packaging:
240
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IPW60R190P6FKSA1 Case style: TO247  
External warehouse:
1720 pcs.
Quantity of pcs. 480+ (Please wait for the order confirmation)
Net price (EUR) 0,9253
Add to comparison tool
Packaging:
240
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IPW60R190P6FKSA1 Case style: TO247  
External warehouse:
2098 pcs.
Quantity of pcs. 120+ (Please wait for the order confirmation)
Net price (EUR) 0,9895
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IPW60R190P6FKSA1 Case style: TO247  
External warehouse:
239 pcs.
Quantity of pcs. 1+ (Please wait for the order confirmation)
Net price (EUR) 1,9129
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 190mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO247
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Max. drain-gate voltage: 10V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT