IPW90R120C3

Symbol Micros: TIPW90r120c3

122179

TIPW90r120c3

Contractor Symbol:

Case : TO 3P

Datasheet

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Transistor N-Channel MOSFET; 900V; 30V; 270mOhm; 36A; 417W; -55°C ~ 150°C; IPW90R120C3FKSA1

Parameters

Open channel resistance:	270mOhm
Max. drain current:	36A
Max. power loss:	417W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPW90R120C3 RoHS Case style: TO 3P Datasheet

In stock:

5 pcs.

Quantity of pcs.	1+	5+	10+	20+	40+
Net price (EUR)	14,3435	13,5107	13,3037	13,1508	13,0402

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Packaging:
5 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPW90R120C3XKSA1 Case style: TO 3P  

External warehouse:

1350 pcs.

Quantity of pcs.	30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	13,0402

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Packaging:
30

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	270mOhm
Max. drain current:	36A
Max. power loss:	417W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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