IRF100B201 UMW

Symbol Micros: TIRF100B201 UMW

406228

TIRF100B201 UMW

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 4,2mOhm; 192A; 441W; -55°C ~ 175°C; Equivalent: IRF100B201; SP001561498;

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Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	192A
Max. power loss:	441W
Case:	TO220
Manufacturer:	UMW
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: UMW Manufacturer part number: IRF100B201 RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1550	0,8827	0,7301	0,6385	0,6080

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	192A
Max. power loss:	441W
Case:	TO220
Manufacturer:	UMW
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

Equivalents

IRF100B201

Symbol Micros: IRF100B201 Info Technical drawing Add to favourites Equivalents

Manufacturer::

Infineon

Manufacturer part number:

IRF100B201

Case style:

TO220

In stock

412 pcs.

Quantity of pcs.	200+
Net price (EUR)	0,7565

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Add inquiry (RFQ)

Packaging: 50

Quantity (multiple 1)

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