IRF1010E

Symbol Micros: TIRF1010
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C;
Parameters
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Manufacturer:: International Rectifier Manufacturer part number: IRF1010EPBF RoHS Case style: TO220 Datasheet
In stock:
235 pcs.
Quantity of pcs. 1+ 5+ 20+ 50+ 350+
Net price (EUR) 0,9699 0,6427 0,5314 0,4942 0,4617
Add to comparison tool
Packaging:
50/350
Manufacturer:: Infineon Manufacturer part number: IRF1010EPBF Case style: TO220  
External warehouse:
280 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 0,6705
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF1010EPBF Case style: TO220  
External warehouse:
12097 pcs.
Quantity of pcs. 400+ (Please wait for the order confirmation)
Net price (EUR) 0,4617
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT