IRF1010ES smd

Micros part number: TIRF1010es
Package: TO263 (D2PAK)
N-MOSFET 84A 60V 200W 0.012Ω
Parameters
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 60V
Producer: International Rectifier
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1010ES RoHS Package: TO263t/r (D2PAK)  
In stock:
20 pcs.
Quantity 1+ 5+ 20+ 100+ 300+
Net price (PLN) 7,0600 5,2300 4,5800 4,2500 4,1500
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Standard packaging:
20
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 60V
Producer: International Rectifier
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Montage: SMD