IRF1010ES smd

Symbol Micros: TIRF1010es

42770

TIRF1010es

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010ESPBF, IRF1010ESTRLPBF

Parameters

Open channel resistance:	12mOhm
Max. drain current:	84A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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Estimated date:
2025-07-29

Quantity of pcs.: 50

• Parameters

Open channel resistance:	12mOhm
Max. drain current:	84A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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