IRF1010ES smd

Symbol Micros: TIRF1010es
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010ESPBF, IRF1010ESTRLPBF
Parameters
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD