IRF1010ES smd

Symbol Micros: TIRF1010es
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Case : TO263 (D2PAK)
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Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010ESPBF, IRF1010ESTRLPBF
Parameters
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1010ESTRLPBF RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,6440 1,3115 1,1222 1,0090 0,9675
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Packaging:
10/50
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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