IRF1010ES-VB TO-263 VBsemi Elec

Symbol Micros: TIRF1010es VBS

530426

TIRF1010es VBS

Contractor Symbol:

Case : TO263

Datasheet

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60V 150A 220W 4mOhm@10V 4V@250uA 1 N-Channel TO-263(D2PAK) MOSFETs ROHS

Parameters

Open channel resistance:	4mOhm
Max. drain current:	150A
Max. power loss:	220W
Case:	TO263
Manufacturer:	VBsemi
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRF1010ES-VB RoHS Case style: TO263t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,0816	0,7203	0,5951	0,5361	0,5148

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4mOhm
Max. drain current:	150A
Max. power loss:	220W
Case:	TO263
Manufacturer:	VBsemi
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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