IRF1010EZ

Symbol Micros: TIRF1010ez

46048

TIRF1010ez

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Case : TO220

Datasheet

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N-MOSFET HEXFET 60V 84A 140W 0,012Ω

Parameters

Open channel resistance:	8,5mOhm
Max. drain current:	84A
Max. power loss:	140W
Case:	TO220
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	8,5mOhm
Max. drain current:	84A
Max. power loss:	140W
Case:	TO220
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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