IRF1010EZ

Symbol Micros: TIRF1010ez

46048

TIRF1010ez

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET HEXFET 60V 84A 140W 0,012Ω

Parameters

Open channel resistance:	8,5mOhm
Max. drain current:	84A
Max. power loss:	140W
Case:	TO220
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF1010EZPBF Case style: TO220  

External warehouse:

11130 pcs.

Quantity of pcs.	400+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3390

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Packaging:
100

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	8,5mOhm
Max. drain current:	84A
Max. power loss:	140W
Case:	TO220
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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