IRF1010N

Symbol Micros: TIRF1010n
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C;
Parameters
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 55V
Max. gate-source Voltage: 20V
         
 
Item available on request
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 55V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT