IRF1010N

Symbol Micros: TIRF1010n

34889

TIRF1010n

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C;

Parameters

Open channel resistance:	11mOhm
Max. drain current:	85A
Max. power loss:	180W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF1010NPBF RoHS Case style: TO220 Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	44+	176+
Net price (EUR)	1,1677	0,8557	0,6855	0,5910	0,5555

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Packaging:
44 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF1010NPBF Case style: TO220  

External warehouse:

118 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,2937

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	11mOhm
Max. drain current:	85A
Max. power loss:	180W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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