IRF1010N
Symbol Micros:
TIRF1010n
Case : TO220
Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C;
Parameters
| Open channel resistance: | 11mOhm |
| Max. drain current: | 85A |
| Max. power loss: | 180W |
| Case: | TO220 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 55V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 11mOhm |
| Max. drain current: | 85A |
| Max. power loss: | 180W |
| Case: | TO220 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 55V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols