IRF1010NS

Symbol Micros: TIRF1010ns
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C;
Parameters
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1010NS RoHS Case style: TO263t/r (D2PAK)  
In stock:
37 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,0346 1,6662 1,4530 1,3209 1,2722
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Packaging:
50
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD