IRF1010NS

Symbol Micros: TIRF1010ns

34890

TIRF1010ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C;

Parameters

Open channel resistance:	11mOhm
Max. drain current:	85A
Max. power loss:	180W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF1010NS RoHS Case style: TO263t/r (D2PAK)  

In stock:

17 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,9765	1,5755	1,3491	1,2123	1,1628

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF1010NSTRLPBF Case style: TO263 (D2PAK)  

External warehouse:

340 pcs.

Quantity of pcs.	10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,1628

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Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	11mOhm
Max. drain current:	85A
Max. power loss:	180W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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