IRF1010NS

Symbol Micros: TIRF1010ns
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C;
Parameters
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1010NS RoHS Case style: TO263t/r (D2PAK)  
In stock:
17 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,9765 1,5755 1,3491 1,2123 1,1628
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Packaging:
50
Manufacturer:: Infineon Manufacturer part number: IRF1010NSTRLPBF Case style: TO263 (D2PAK)  
External warehouse:
340 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,1628
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD