IRF1018EPBF

Symbol Micros: TIRF1018e
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 60V; 20V; 8,4mOhm; 79A; 110W; -55°C~175°C; Replacement: IRF1018EPBF; IRF1018E;
Parameters
Open channel resistance: 8,4mOhm
Max. power loss: 110W
Max. drain current: 79A
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1018EPBF RoHS Case style: TO220 Datasheet
In stock:
10 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8251 0,5223 0,4114 0,3744 0,3582
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Packaging:
50/200
Manufacturer:: Infineon Manufacturer part number: IRF1018EPBF Case style: TO220  
External warehouse:
12900 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 0,3701
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF1018EPBF Case style: TO220  
External warehouse:
790 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 0,5088
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF1018EPBF Case style: TO220  
External warehouse:
16100 pcs.
Quantity of pcs. 400+ (Please wait for the order confirmation)
Net price (EUR) 0,3582
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 8,4mOhm
Max. power loss: 110W
Max. drain current: 79A
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT