IRF1018ES
Symbol Micros:
TIRF1018es
Case : TO263 (D2PAK)
N-MOSFET HEXFET 60V 79A 110W 0,0084Ω
Parameters
Open channel resistance: | 8,4mOhm |
Max. drain current: | 79A |
Max. power loss: | 110W |
Case: | TO263 (D2PAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Open channel resistance: | 8,4mOhm |
Max. drain current: | 79A |
Max. power loss: | 110W |
Case: | TO263 (D2PAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols