IRF1018ES

Symbol Micros: TIRF1018es

46050

TIRF1018es

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET HEXFET 60V 79A 110W 0,0084Ω

Parameters

Open channel resistance:	8,4mOhm
Max. drain current:	79A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF1018ESPBF-GURT RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

5 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,7494	1,3853	1,1796	1,0827	1,0283

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	8,4mOhm
Max. drain current:	79A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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