IRF1310NS
Symbol Micros:
TIRF1310ns
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 42A 3.8W 0,036 Ohm; IRF1310NSPBF IRF1310NSTRLPBF IRF1310NSPBF-GURT
Parameters
Open channel resistance: | 36mOhm |
Max. drain current: | 42A |
Max. power loss: | 3,8W |
Case: | TO263 (D2PAK) |
Manufacturer: | International Rectifier |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRF1310NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
1290 pcs.
Quantity of pcs. | 10+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,6019 |
Manufacturer:: Infineon
Manufacturer part number: IRF1310NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
24800 pcs.
Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,5062 |
Manufacturer:: Infineon
Manufacturer part number: IRF1310NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
10400 pcs.
Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,4860 |
Open channel resistance: | 36mOhm |
Max. drain current: | 42A |
Max. power loss: | 3,8W |
Case: | TO263 (D2PAK) |
Manufacturer: | International Rectifier |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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