IRF1312

Symbol Micros: TIRF1312
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Case : TO220
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N-MOSFET HEXFET 80V 95A 3.8W 0,010Ω
Parameters
Open channel resistance: 10mOhm
Max. drain current: 95A
Max. power loss: 210W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 80V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1312 RoHS Case style: TO220 Datasheet
In stock:
44 pcs.
Quantity of pcs. 1+ 3+ 10+ 20+ 44+
Net price (EUR) 1,5394 1,2038 1,0139 0,9514 0,9051
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Packaging:
44
Open channel resistance: 10mOhm
Max. drain current: 95A
Max. power loss: 210W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 80V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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