IRF200P222 

Symbol Micros: TIRF200P222
Contractor Symbol:
Case : TO247
Transistor N-Channel MOSFET; 200V; 20V; 6,6mOhm; 182A; 556W; -55°C~175°C; Substitute: IRF200P223;
Parameters
Open channel resistance: 6,6mOhm
Max. drain current: 182A
Max. power loss: 556W
Case: TO247
Manufacturer: INFINEON
Max. drain-source voltage: 200V
Max. drain-gate voltage: 10V
         
 
Item available on request
Open channel resistance: 6,6mOhm
Max. drain current: 182A
Max. power loss: 556W
Case: TO247
Manufacturer: INFINEON
Max. drain-source voltage: 200V
Max. drain-gate voltage: 10V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT