IRF3205

Symbol Micros: TIRF3205
Contractor Symbol:
Case : TO220
N-MOSFET 110A 55V 200W 0.008Ω
Parameters
Open channel resistance: 8mOhm
Max. drain current: 110A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF3205PBF RoHS Case style: TO220  
In stock:
411 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,1390 0,8705 0,7200 0,6297 0,5996
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Packaging:
50/1000
Open channel resistance: 8mOhm
Max. drain current: 110A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT