IRF3205S

Symbol Micros: TIRF3205s
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Case : TO263 (D2PAK)
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N-MOSFET 110A 55V 200W
Parameters
Open channel resistance: 8mOhm
Max. drain current: 110A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF3205STRLPBF RoHS Case style: TO263t/r (D2PAK)  
In stock:
210 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,2622 0,8847 0,7504 0,6879 0,6647
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Packaging:
800
Open channel resistance: 8mOhm
Max. drain current: 110A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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