IRF3205ZS

Symbol Micros: TIRF3205zs

38702

TIRF3205zs

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 110A 55V 170W IRF3205ZSTRLPBF , (IRF3205ZSPBF TUBE *obsolete)

Parameters

Open channel resistance:	6,5mOhm
Max. drain current:	110A
Max. power loss:	170W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF3205ZS RoHS Case style: TO263 (D2PAK)  

In stock:

274 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,3262	0,9288	0,7901	0,7219	0,6984

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Packaging:
800 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	6,5mOhm
Max. drain current:	110A
Max. power loss:	170W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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