IRF3703

Symbol Micros: TIRF3703

46081

TIRF3703

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET HEXFET 30V 210A 230W 0,0024Ω

Parameters

Open channel resistance:	3,9mOhm
Max. drain current:	210A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF3703 RoHS Case style: TO220 Datasheet

In stock:

35 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,1362	1,7497	1,5248	1,3866	1,3351

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF3703PBF Case style: TO220  

External warehouse:

130 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	1,3351

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Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	3,9mOhm
Max. drain current:	210A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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